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Semiconductor Physics and Devices: Basic Principles, 4 th edition Chapter 14 By D. A. Neamen Problem Solutions ______________________________________________________________________________________ 14.9 We have 0 2 2 n p L p n n G dx nd D or n L n pp D G L n dx nd 22 2 where nnn DL The general solution can be written in the form nL nn p G L x B L x Axn sinhcosh For s at 0x means 00 pn . Then nLGA 0 nLGA At Wx , Wx po Wx p n ns dx nd D Now n nLp L W GWn cosh nL n G L W B sinh and nn nL Wx p L W L G dx nd sinh nn L W L B cosh so we can write nn n nn nnL L W L BD L W L DG coshsinh n nLo L W Gs cosh nL n G L W B sinh Solving for B, we obtain n o nn n n no n nL L W s L W L D L W s L W LG B sinhcosh 1coshsinh The solution is then nn nLp L x B L x Gxn sinhcosh1 where B was just given. _______________________________________ 14.10 36 0 1051025 nnn DL cm 7 0 10510 ppp DL 310236.2 cm Now dp p an n iS NL D NL D enJ 2 21019 105.1106.1 153163 1010236.2 10 10105 25 1010790.1 SJ A/cm 2 101079.15 SS AJI 1010950.8 A (a) AWeGI LL We find 6350.0 105.1 1010 ln0259.0 210 1516 biV V 2/1 2 da dabis NN NN e V W 19 14 106.1 635.01085.87.112 2/1 1516 1516 1010 1010 510508.9 W cm Then 52119 10508.95105106.1 LI 380.0 A 380 mA (b) S L toc I I VV 1ln 101095.8 380.0 1ln0259.0 5145.0ocV V (c) 810.0 635.0 5145.0 bi oc V V _______________________________________