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Semiconductor Physics and Devices: Basic Principles, 4 th edition Chapter 8 By D. A. Neamen Problem Solutions ______________________________________________________________________________________ Define kT eVa a and kT EE FiFn Then the recombination rate can be written as iiiiO iii neennen neenen R a a 2 or eee en R a a O i 2 1 To find the maximum recombination rate, set 0 d dR 1 2 1 eee d den a a O i or 2 21 1 0 eee en a a O i eee a which simplifies to 22 1 0 eee eeeen a aa O i The denominator is not zero, so we have eee a0 or aee 2 2 a Then the maximum recombination rate becomes 22max 2 1 aaa a eee en R O i 22 2 1 aa a ee en O i or 12 1 2max a a e en R O i which can be written as 1 2 exp2 1exp max kT eV kT eV n R a O a i If ekTVa , then we can neglect the (-1) term in the numerator and the (+1) term in the denominator, so we finally have kT eVn R a O i 2 exp 2 max Q.E.D. _______________________________________ 8.35 We have W gen eGdxJ 0 In this case, 19104 gG cm 3 s 1 and is a constant through the space charge region. Then WgeJ gen We find 2 ln i da tbi n NN VV 210 1515 105.1 105105 ln0259.0 or 659.0biV V Also 2/1 2 da daRbis NN NN e VV W 19 14 106.1 10659.01085.87.112 2/1 1515 1515 105105 105105 or 41035.2 W cm Then 41919 1035.2104106.1 genJ or 3105.1 genJ A/cm 2 _______________________________________