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Semiconductor Physics and Devices: Basic Principles, 4 th edition Chapter 8 By D. A. Neamen Problem Solutions ______________________________________________________________________________________ (ii) t a sD V V II exp 0259.0 6.0 exp1050.1 22 1210726.1 A (iii) 0259.0 8.0 exp1050.1 22 DI 910896.3 A (iv) 0259.0 0.1 exp1050.1 22 DI 610795.8 A (b) 02 WAen I i gen 26 1616 108.1 107107 ln0259.0biV 263.1 V 19 14 106.1 3263.11085.81.132 W 2/1 1616 1616 107107 107107 510201.4 cm (i)Then 8 56194 1022 10201.4108.1106.1102 genI 1410049.6 A (ii) t a rorec V V II 2 exp 0259.02 6.0 exp106 14 910436.6 A (iii) 0259.02 8.0 exp106 14 recI 710058.3 A (iv) 0259.02 0.1 exp106 14 recI 510453.1 A _______________________________________ 8.31 Using results from Problem 8.30, we find 4.0aV V, 161064.7 dI A, 101035.1 recI A, 101035.1 TI A 6.0aV V, 121073.1 dI A 91044.6 recI A, 91044.6 TI A 8.0aV V, 91090.3 dI A 71006.3 recI A, 71010.3 TI A 0.1aV V, 61080.8 dI A 51045.1 recI A, 51033.2 TI A 2.1aV V. 21099.1 dI A 41090.6 recI A, 21006.2 TI A _______________________________________ 8.32 Plot _______________________________________ 8.33 Plot _______________________________________ 8.34 We have that ppnn nnp R nOpO i 2 Let OnOpO and inpn We can write kT EE nn FiFn i exp and kT EE np FpFi i exp We also have aFpFiFiFn eVEEEE so that FiFnaFpFi EEeVEE Then kT EEeV np FiFna i exp kT EE kT eV n FiFna i expexp