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Semiconductor Physics and Devices: Basic Principles, 4 th edition Chapter 8 By D. A. Neamen Problem Solutions ______________________________________________________________________________________ (a) 3.0aV V, 41051.1 pN (b) 4.0aV V, 51017.7 pN (c) 5.0aV V, 71040.3 pN Similarly, the total number of excess holes in the n-region is found to be 1exp t a nopn V V pALP We find that 0.10pD cm 2 /s and 0.10pL m Also 4 16 2102 1025.2 10 105.1 d i no N n p cm 3 Then 1exp1025.2 2 t a n V V P So (a) 3.0aV V, 31041.2 nP (b) 4.0aV V, 51015.1 nP (c) 5.0aV V, 61045.5 nP _______________________________________ 8.20 kT eV kT E V V nI ag t a i expexpexp2 Then kT EeV I ga exp so kT EeV kT EeV I I ga ga 22 11 2 1 exp exp or kT EEeVeV I I ggaa 2121 2 1 exp We then have 0259.0 525.032.0255.0 exp 1010 1010 2 6 3 gE or 0259.0 59.0 exp10 23 gE Then 3 2 10ln0259.059.0 gE or 769.02 gE eV _______________________________________ 8.21 (a) We have pO p dnO n a iS D N D N AenI 112 which can be written in the form 2 iS nCI kT ET NNC g OcO exp 300 3 or kT E CTI g S exp3 (b) Taking the ratio 1 2 3 1 2 1 2 exp exp kT E kT E T T I I g g S S 21 3 1 2 11 exp kTkT E T T g For 3001 T K, 0259.01 kT , 61.38 1 1 kT For 4002 T K, 03453.02 kT , 96.28 1 2 kT (i) Germanium: 66.0gE eV 96.2861.3866.0exp 300 400 3 1 2 S S I I or 1383 1 2 S S I I (ii) Silicon: 12.1gE eV 96.2861.3812.1exp 300 400 3 1 2 S S I I or 5 1 2 1017.1 S S I I _______________________________________