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Semiconductor Physics and Devices: Basic Principles, 4 th edition Chapter 9 By D. A. Neamen Problem Solutions ______________________________________________________________________________________ dmdmdE nn ** 2 2 1 We can also write FccF EEEEEE nn em 2* 2 1 so that kT e h m dn nn exp2 3 * d kT mn 2 2* 4 2 exp We can write 2222 zyx The differential volume element is zyx dddd 24 The current is due to all x-directed velocities that are greater than Ox and for all y- and z- directed velocities. Then kT e h m J nn ms exp2 3 * x xn x d kT m Ox 2 exp 2* y yn d kT m 2 exp 2* z zn d kT m 2 exp 2* We can write abiOxn VVem 2* 2 1 Make a change of variables: kT VV kT m abixn 2 2 2 2* or kT VVe m kT abi n x 2 * 2 2 Taking the differential, we find d m kT d n xx * 2 We may note that when Oxx , 0 . We may define other change of variables, 2/1 * 2 2* 2 2 n y yn m kT kT m 2/1 * 2 2* 2 2 n z zn m kT kT m Substituting the new variables, we have kT e m kT h m J n n n ms exp 2 2 2 * 3 * d kT VVe abi 0 2expexp dd 22 expexp _______________________________________ 9.20 For the Schottky diode, t a V V exp106101080.0 843 (a) 84 3 10610 1080.0 ln0259.0SBVa 4845.0 V Then 7695.0285.04845.0 pnVa V (b) 0259.0 7695.0 exp101080.0 113 pnA 55 1010998.0 pnA cm 2 _______________________________________ 9.21 For the pn junction, 16134 104.6108108 sI A (a) 16 6 104.6 10150 ln0259.0aV 678.0 V (b) 16 6 104.6 10700 ln0259.0aV 718.0 V (c) 16 3 104.6 102.1 ln0259.0aV 732.0 V