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Semiconductor Physics and Devices: Basic Principles, 4 th edition Chapter 14 By D. A. Neamen Problem Solutions ______________________________________________________________________________________ dxxWeI Ox pOpnL 0 exp pOpnWe Ox x 0 exp 1 which becomes OpOpnL xWeI exp1 Now 504501200106.11050 194 LI 44716 10105exp110210 or 131.0LI A _______________________________________ 14.22 210 1516 105.1 10210 ln0259.0biV 6530.0 V 7 0 10525 nnn DL 310536.3 cm 7 0 1010 ppp DL 310 cm 2/1 2 da daRbis NN NN e VV W 19 14 106.1 5653.01085.87.112 2/1 1516 1516 10210 10210 Then 410095.2 W cm (a) AeWGI LL 1 321419 101010095.2106.1 510352.3 A 52.33 A (b) In n-region, 14721 0 101010 pLGp cm 3 In p-region, 721 0 10510 nLGn 14105 cm 3 (c) pnLL LLWAeGI 32119 1010106.1 4100.1036.35095.2 410593.7 LI A 7593.0 mA _______________________________________ 14.23 In the n-region under steady state and for 0 , we have 0 2 2 p n L n p p G xd pd D or p L p nn D G L p xd pd 22 2 where ppp DL and where x is positive in the negative x direction. The homogenerous solution is found from 0 22 2 p nhnh L p xd pd The general solution is found to be pp nh L x B L x Axp expexp The particular solution is found from p L p np D G L p 2 which yields pL p pL np G D LG p 2 The total solution is the sum of the homogeneous and particular solutions, so we have pL pp n G L x B L x Axp expexp One boundary condition is that np remains finite as x which means that 0B . Then at 0x , nOnn ppp 000 , so that nOn pp 0 . We find that pLnO GpA The solution is then written as p nOpLpLn L x pGGxp exp