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Semiconductor Physics and Devices: Basic Principles, 4 th edition Chapter 7 By D. A. Neamen Problem Solutions ______________________________________________________________________________________ Then a d n p N N x x 25.0 Now 2 ln i da tbi n NN VV so 26 2 108.1 25.0 ln0259.0137.1 aN We can then write 0259.02 137.1 exp 25.0 108.1 6 aN which yields 161023.1 aN cm 3 and 151007.3 dN cm 3 _______________________________________ 7.23 26 1516 108.1 105102 ln0259.0biV 162.1 V Rbi VV C 1 So 1 2 2 1 Rbi Rbi R R VV VV VC VC 5.0162.1 162.1 50.1 2 RV 662.1 162.1 50.1 22 RV which yields 58.22 RV V _______________________________________ 7.24 (a) 210 1615 105.1 104102 ln0259.0biV 6889.0 V 2/1 2 daRbi das NNVV NNe ACAC RV6889.02 1085.87.11106.1 105 1419 4 2/1 1615 1615 104102 104102 RV C 6889.0 102806.6 12 (i) For 0RV , 567.7C pF (ii) For 5RV V, 633.2C pF (b) 26 1615 108.1 104102 ln0259.0biV 157.1 V 2/1 2 daRbi das NNVV NNe ACAC RV157.12 1085.81.13106.1 105 1419 4 2/1 1615 1615 104102 104102 RV C 157.1 106457.6 12 (i) For 0RV , 178.6C pF (ii) For 5RV V, 678.2C pF _______________________________________ 7.25 210 1517 105.1 105102 ln0259.0biV 7543.0 V (a) 2/1 2 daRbi das NNVV NNe ACAC 107543.02 1085.87.11106.1 108 1419 4 2/1 1517 1517 105102 105102 1210904.4 C F 2 2 1 2 1 fC L LC f