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Semiconductor Physics and Devices: Basic Principles, 4 th edition Chapter 9 By D. A. Neamen Problem Solutions ______________________________________________________________________________________ 9.7 (a) From the figure, 90.0biV V (b) We find 15 15 2 10034.1 90.02 0103 1 RV C and ds Ne 2 10034.1 15 We can then write 151419 10034.11085.81.13106.1 2 dN or 161004.1 dN cm 3 (c) d c tn N N V ln 16 17 1004.1 107.4 ln0259.0 or 0986.0n V (d) 0986.090.0 nbiBn V or 9986.0Bn V _______________________________________ 9.8 From Figure 9.5, 63.0BO V (a) 224.0 105 108.2 ln0259.0 15 19 n V 406.0224.063.00 nBbiV V (i) 2/1 1519 14 105106.1 1406.01085.87.112 nx 510033.6 cm or 6033.0nx m 14 51519 max 1085.87.11 10033.6105106.1 41066.4 V/cm (ii) 2/1 1519 14 105106.1 5406.01085.87.112 nx 410183.1 cm or 183.1nx m 14 41519 max 1085.87.11 10183.1105106.1 41014.9 V/cm (b) (i) s e 4 2/1 14 419 1085.87.114 1066.4106.1 0239.0 V s m e x 16 2/1 414 19 1066.41085.87.1116 106.1 or mx 71057.2 cm (ii) 2/1 14 419 1085.87.114 1014.9106.1 0335.0 V 2/1 414 19 1014.91085.87.1116 106.1 mx 71083.1 cm _______________________________________ 9.9 We have x x e x s 16 or ex x e xe s 16 2 Now e x e dx xed s 2 2 16 0 Solving for x, we find s m e xx 16 Substituting this value of mxx into the equation for the potential, we find s s s e e e 16 16 16