Prévia do material em texto
Semiconductor Physics and Devices: Basic Principles, 4 th edition Chapter 12 By D. A. Neamen Problem Solutions ______________________________________________________________________________________ 50.0 1 1 1 1 997238.0 pE nE pE I I I 00138.0 pEI mA 38.1 A pERnE pEnE III II 00138.050.0 00138.050.0 997238.0 RI 00139.0 RI mA 39.1 A _______________________________________ 12.22 (a) Using Equation (12.37) B BEBB nC L ApeD I 0 B B B B t EB L x L x V V tanh 1 sinh 1exp Now 16 2102 0 10 105.1 B i B N n p 41025.2 cm 3 7 0 10510 BBB DL 310236.2 cm We find 3 4 10236.2 1070.0 sinhsinh B B L x 03131.0 3 4 10236.2 1070.0 tanhtanh B B L x 03130.0 Then 3 4419 10236.2 1051025.210106.1 nCI 03130.0 1 03131.0 1 0259.0 550.0 exp 41029.4 nCI A 429.0 mA (b) E B B E E B x x D D N N 1 1 95969.0 5.0 7.0 10 15 105 10 1 1 17 16 3 4 10236.2 1070.0 cosh 1 cosh 1 B B T L x 99951.0 995.099951.095969.0 T 95442.0 94.20 95442.01 95442.0 1 Then 75.1680.094.20 BC II A (c) 3.11912595442.0 EC II A _______________________________________ 12.23 (a) We have B B B B t BE B BOB nE L x L x V V L neD J sinh 1 tanh 1exp We find that 3 16 2102 105.4 105 105.1 B i BO N n n cm 3 and 810515 BOBB DL 410660.8 cm Then 4 319 1066.8 105.415106.1 nEJ 66.8 70.0 sinh 1 66.8 70.0 tanh 0259.0 60.0 exp or 779.1nEJ A/cm 2 We also have