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Step of 5 3.013P The built in voltage of a junction is, (1) the p and n regions are unequally doped. N, = which represents acceptor concentration. represents donor Intrinsic concentration n, value is thermal voltage VT value is 26 mV. Substitute for NA and for ND for 26 mV for VT in equation (1). =757 mV 1 mV V Step of 5 The Width of a depletion region is, W N, for an intrinsic silicon Substitute F/cm permittivity of free space F/cm Substitute C for 'q' charge of an electron, 0.757 V for for NA and for ND F/cm for E 1 W = =0.33 Step of 5 The width of a depletion region is, and Xp represent the widths of a depletion region extends into p and n region Substitute equivalent in equation. W N W N Substitute 0.33 for 'W /cm3 for ND and for NA 0.33 µm = 11 Step of 5 Determine Substitute 0.03 for Xp and 0.33 for W Step of 5 Determine the charge stored on either side of the junction, Substitute 1 C for q for NA and for ND for A, 0.33 for W = Therefore, the charge stored on either side of the junction is