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Semiconductor Physics and Devices: Basic Principles, 4 th edition Chapter 11 By D. A. Neamen Problem Solutions ______________________________________________________________________________________ Chapter 11 11.1 (a) t GS D V V I 1.2 exp10 15 For 5.0GSV V, 0259.01.2 5.0 exp10 15 DI 121083.9 DI A For 7.0GSV V, 101088.3 DI A For 9.0GSV V, 81054.1 DI A Then the total current is: 610DT II For 5.0GSV V, 83.9TI A For 7.0GSV V, 388.0TI mA For 9.0GSV V, 4.15TI mA (b) Power: DDT VIP Then For 5.0GSV V, 2.49P W For 7.0GSV V, 94.1P mW For 9.0GSV V, 77P mW _______________________________________ 11.2 t GSGS t GS t GS D D nV VV nV V nV V I I 12 1 2 1 2 exp exp exp 1 2 12 ln D D tGSGS I I nVVV (a) 10ln0259.012 GSGS VV 0596.0 V (b) 10ln0259.05.112 GSGS VV 0895.0 V (c) 10ln0259.01.212 GSGS VV 125.0 V _______________________________________ 11.3 3653.0 105.1 102 ln0259.0 10 16 fp V We find that 1619 14 102106.1 1085.87.1122 a s eN 510544.2 cm/V 2/1 satVV eN L DSfpDSfp a s 2 (a) 6.04.00.1 TGSDS VVsatV V 510544.2 L 6.03653.023653.0 510413.1 L cm 1413.0 m (b) 6.04.00.1 TGSDS VVsatV V 510544.2 L 6.03653.043653.0 510816.2 L cm 2816.0 m (c) 6.14.00.2 TGSDS VVsatV V 510544.2 L 6.13653.023653.0 610461.3 L cm 0346.0 m (d) 6.14.00.2 TGSDS VVsatV V 510544.2 L 6.13653.043653.0 510749.1 L cm 1749.0 m _______________________________________ 11.4 3653.0 105.1 102 ln0259.0 10 16 fp V We find that 1619 14 102106.1 1085.87.1122 a s eN 510544.2 cm/V 2/1 6.14.00.2 TGSDS VVsatV V satVV eN L DSfpDSfp a s 2