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Step 1 of 2 3.003E The intrinsic carrier density for Silicon at temperature T = 300K is, Here, the silicon semiconductor is doped with a trivalent p-type impurity (boron). The electron concentration drops below the intrinsic level by a factor of 10⁶ Therefore, the new electron concentration is simply ratio of the intrinsic carrier density n, to Calculate the new concentration of free electrons in the p-type boron. electrons/cm3 Step 2 of 2 Use the below relation to find the concentration of minority electrons. Substitute 1.5 for n, and for in the equation. = Here, the silicon semiconductor is doped with a trivalent p-type impurity (boron). Thus, the concentration of the majority carriers (holes) is equal to N, (that is, if the acceptor doping concentration is , where N, n, the hole concentration becomes = The acceptor concentration is, It Therefore, the acceptor doping concentration is