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Semiconductor Physics and Devices: Basic Principles, 4 th edition Chapter 11 By D. A. Neamen Problem Solutions ______________________________________________________________________________________ 16875.0 115.080.0 80.0 19708.0 mA (ii) 510077.2 L 6.03758.043758.0 510293.2 cm 2293.0 m DD I LL L I 16875.0 2293.080.0 80.0 23655.0 mA (b) 1 3 1 24 1019708.023655.0 DS D o V I r 41007.5 or 7.50 k (c) 6.14.00.2 TGSDS VVsatV V (i) 510077.2 L 6.13758.023758.0 610819.2 cm 02819.0 m DD I LL L I 16875.0 02819.080.0 80.0 17491.0 mA (ii) 510077.2 L 6.03758.043758.0 510425.1 cm 1425.0 m DD I LL L I 16875.0 1425.080.0 80.0 20532.0 mA 1 DS D o V I r 1 3 24 1017491.020532.0 410577.6 or 77.65 k _______________________________________ 11.7 (a) (i) 2 2 TGS n D VV L Wk I 2 35.08.010 2 075.0 07594.0 mA 94.75 A (ii) DSDD VII 1 5.102.019375.75 22.78 A (iii) 94.7502.0 11 D o I r 658.0 M 658 k (b) (i) 2 35.025.110 2 075.0 DI 30375.0 mA (ii) 5.102.0130375.0 DI 3129.0 mA (iii) 165 30375.002.0 1 or k _______________________________________ 11.8 Plot _______________________________________ 11.9 (a) Assume 1satVDS V. Then L satVDS sat We find L ( m) sat (V/cm) 3 1 5.0 25.0 13.0 31033.3 4101 4102 4104 41069.7 (b) Assume 500n cm 2 /V-s, we have satn Then For 3L m, 61067.1 cm/s For 1L m, 6105 cm/s For 5.0L m, 710 cm/s _______________________________________