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Semiconductor Physics and Devices: Basic Principles, 4 th edition Chapter 7 By D. A. Neamen Problem Solutions ______________________________________________________________________________________ 1510684.2 dN cm 3 1710147.2 aN cm 3 (b) 2/1 12 dad aRbis n NNN N e VV x 19 14 106.1 10740.01085.87.112 2/1 1517 10684.210147.2 1 1 80 410262.2 cm or 262.2nx m 2/1 12 daa dRbis p NNN N e VV x 19 14 106.1 10740.01085.87.112 2/1 1517 10684.210147.2 1 80 1 61083.2 cm or 0283.0px m (c) W VV Rbi 2 max 4100283.0262.2 10740.02 41038.9 V/cm (d) 2/1 2 daRbi das NNVV NNe C 10740.02 1085.87.11106.1 1419 2/1 1517 1517 10684.210147.2 10684.210147.2 91052.4 C F/cm 2 _______________________________________ 7.19 (a) abiabi NVNV 3 22 ln 3 ln i ad t i ad t n NN V n NN V 22 lnln3ln i ad t i ad t n NN V n NN V 3ln0259.03ln tV 02845.0 V (b) 2/1 2 Rbi as VV Ne C So 732.13 33 2/1 a a a a N N NC NC (c) For a larger doping, the space charge width narrows which results in a larger capacitance. _______________________________________ 7.20 (a) 210 1715 105.1 104104 ln0259.0biV or 766.0biV V Now 2/1 max 2 da da s Rbi NN NNVVe or 14 19 25 1085.87.11 106.12 103 Rbi VV 1715 1715 104104 104104 or Rbi VV 910 10224.1109 so that 53.73 Rbi VV V which yields 8.72RV V (b) 210 1716 105.1 104104 ln0259.0biV or 826.0biV V We have 14 19 25 1085.87.11 106.12 103 Rbi VV 1716 1716 104104 104104 so that 008.8 Rbi VV V